Samsung Electronics announce mass production of 3rd gen V-NAND flash
Samsung Electronics, the leader in memory tech has started mass production of 256GB 3D Veritcal NAND flash memory (3rd generation). The new memory format is based on 48 layers of 3-bit MLC arrays. The new format was first introduced earlier this year. The new 48 layer 3-bit MLC chip consumer 30% less power and achieves upto 40% more productivity when compared to 2nd generation 32-layer 3-bit MLC. In short, the 3rd generation V-NAND can store 256GB of data on a chip that is smaller than the tip of a finger.
“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. “By making full use of Samsung V-NAND’s excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus.”
The 3rd generation V-NAND chip uses 3D Charge Trap Flash structure to stack arrays vertically to create a 48 level cell and this cell is connected to 1.8 billion channel holes (electrically). Each chip will contain more than 85.3 billion cells and each cell can store 3 bits of data.
