Samsung announces production of 20nm LP-DDR3
Samsung has announced that production of ultra high speed 4 gigabit new generation of LPDDR3 RAM that is also low on power, manufactured using a 20nm fabrication process. LPDDR RAM is mostly used in devices like smartphones and tablets and now, the LPDDR3 matches the performance of standard DRAM manufactured for personal comuters (laptops and desktops). The new 4Gb LPDDR3 RAM can do data transfer at upto 2133 Mbps per pin and has a data transmission speed of 800Mbps, which is 2x faster than current generation LPDDR2 RAM. If the storage drive supports similar speed, one can copy three Full HD videos (17GB in size) in under one second (just a reference to explain how fast the RAM is).
“By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner.”
LPDDR3 DRAM consumes 20% less power than 30 nm classLPDDR3 RAM and offers 30% performance increase over the same. Samsung will ship 2GB package to OEMs (4x512MB chips) and the whole memory package is just 0.8mm thick.
