Samsung announce availability of 850 EVO SSD with V-NAND technology
Samsung Electronics has announced the global availability of the new 850 EVO SSD. 850 EVO is based on Samsung’s brand new 3-bit 3D Vertical NAND (V-NAND) that offers more capacity, speed, endurance and power efficiency of traditional 2D Planar NAND. The new high performance SSD will be available in 53 countries this month.
“We are thrilled to be providing users with an improved computing experience through the new 850 EVO SSDs,” said Unsoo Kim, Senior Vice President of the Branded Product Marketing team at Samsung Electronics. “Samsung will continue to introduce V-NAND-based SSDs in a variety of form factors, while accelerating the growth of the global SSD market.”
Samsung 850 EVO will be available in 120GB, 250GB, 500GB and 1TB capacities, will have a whopping 540MBps sequential read speeds (upto) and the write speeds can reach 520MB/s. Thanks to TurboWrite technology, 1TB variant can attain random write speeds of 90K IOPS. 500GB and 1TB drives can withstand 80GB data writes per day for five years.
youtube video: Below is the full list of specification for 850EVO SSD.
| Samsung SSD 850 EVO | ||
|---|---|---|
| Capacity | 120GB, 250GB, 500GB, 1TB(1,000GB) | |
| Dimension (W x H x D) | 100 x 69.85 x 6.8 (mm), 2.5” form factor | |
| Interface | SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s) | |
| Controller | 120/250/500GB : Samsung MGX controller 1TB: Samsung MEX controller |
|
| NAND Flash Memory | Samsung 32 layer 3D V-NAND | |
| DRAM Cache Memory | 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2 | |
| Performance* | Sequential Read | Max. 540 MB/s |
| Sequential Write** | Max. 520 MB/s | |
| 4KB Random Read (QD1) | Max. 10,000 IOPS | |
| 4KB Random Write (QD1) | Max. 40,000 IOPS | |
| 4KB Random Read (QD32) | Max. 98,000 IOPS(500GB/1TB) Max. 97,000 IOPS(250GB) Max. 94,000 IOPS(120GB) |
|
| 4KB Random Write (QD32) | Max. 90,000 IOPS(500GB/1TB) Max. 88,000 IOPS(120GB/250GB) |
|
| Data Security | AES 256-bit Full Disk Encryption (FDE) TCG/Opal V2.0, Encrypted Drive(IEEE1667) |
|
| Weight | Max. 66g (1TB) | |
| Reliability | MTBF: 1.5 million hours | |
| TBW | 120/250GB: 75TBW 500GB/1TB: 150 TBW |
|
| Power Consumption*** | Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB) Idle: Max. 50mW Device Sleep: 2mW(120/250/500GB), 4mW(1TB) |
|
| Supporting features | TRIM(Required OS support), Garbage Collection, S.M.A.R.T. | |
| Temperature | Operating: 0°C to 70°C Non-Operating: -40°C to 85°C |
|
| Humidity | 5% to 95%, non-condensing | |
| Vibration | Non-Operating: 20~2000Hz, 20G | |
| Shock | Non-Operating: 1500G, duration 0.5m sec, 3 axis | |
| Warranty | 5 Years Limited | |
